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LET8180
RF POWER TRANSISTORS Ldmos Enhanced Technology
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
* EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION, PUSH-PULL * POUT = 220 W with 17 dB TYP. gain @ 860 MHz * BeO FREE PACKAGE * INTERNAL INPUT MATCHING * ESD PROTECTION
ORDER CODE LET8180 M252 epoxy sealed BRANDING LET8180
DESCRIPTION The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for base station applications requiring high linearity.
PIN CONNECTION
1 2
3 5 4
1. Drain 2. Drain 3. Source
4. Gate 5. Gate
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc =+70 C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 18 289 200 -65 to +150 Unit V V A W C C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 0.45 C/W
January, 28 2003
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LET8180
ELECTRICAL SPECIFICATION (TCASE = 25 C) STATIC (Per Section)
Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 32 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions ID = 10 A VDS = 32 V VDS = 0 V ID = TBD ID = 3 A ID = 3 A VDS = 32 V VDS = 32 V VDS = 32 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 2.5 0.28 2.6 TBD 70 Min. 65 10 1 4.5 0.45 Typ. Max. Unit V A A V V mho pF pF pF
* Includes Internal Input Moscap.
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
DYNAMIC (f = 860 MHz)
POUT(1) D(1) GP(2) IMD3(2) Load mismatch VDD = 32 V VDD = 32 V VDD = 32 V VDD = 32 V IDQ = TBD IDQ = TBD IDQ = TBD IDQ = TBD POUT = 200 W PEP POUT = 200 W PEP POUT = 200 W 10:1 200 50 16 220 60 17 -31 W % dB dBc VSWR
VDD = 32 V IDQ = TBD ALL PHASE ANGLES
DYNAMIC (f = 470 - 860 MHz)
POUT(1) D
(1)
VDD = 32 V VDD = 32 V VDD = 32 V
IDQ = TBD IDQ = TBD IDQ = TBD
180 50 14.5
W % dB
GP(1)
(1) 1 dB Compression point (2) f1 = 860 MHz, f2 = 860.1 MHz
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 2 M3
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LET8180 M252 (.400 x .860 4L BAL N/HERM W/FLG) MECHANICAL DATA
mm Inch MAX 8.64 10.80 3.00 9.65 2.16 21.97 27.94 33.91 0.10 1.52 2.36 4.57 9.96 21.64 34.16 0.15 1.78 2.74 5.33 10.34 22.05 1.335 .004 .060 .093 .180 .392 .852 3.30 9.91 2.92 22.23 .118 .380 .085 .865 1.100 1.345 .006 .070 .108 .210 .407 .868 MIN. .320 .425 .130 .390 .115 .875 TYP. MAX .340
DIM.
A B C D E F G H I J K L M N
MIN. 8.13
TYP.
Controlling dimension: Inches 1022783C
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LET8180
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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